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Ordering number :EN5850
N-Channel Silicon MOS FET
FW214
Ultrahigh-Speed Switching Applications
Features
* Low ON resistance. * 2.5V drive.
Package Dimensions
unit:mm 2129
[FW214]
8 5
0.3
5.0 0.595 1.27 0.43
0.1
1.5
1.8max
1
4
0.2
1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2 6:Drain2 7:Drain1 8:Drain1 SANYO:SOP8
4.4
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1%
Mounted on ceramic board (1200mm2x0.8mm) 1unit Mounted on ceramic board (1200mm2x0.8mm)
Conditions
Ratings 20 10 5 48 1.7 2.0 150 -55 to +150
6.0
Unit V V A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leak Current Cutoff Current Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0 0.4 8 13 38 50 500 280 150 20 250 70 130 22 3 3 1.0 1.2 50 70 Conditions Ratings min 20 100 10 1.3 typ max Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52698TS (KOTO) TA-0974 No.5850-1/3
FW214
Switching Time Test Circuit
4V 0V VIN VIN PW=10s D.C.1% D VDD=10V ID=5A RL=2 VOUT
G
P.G
FW214 50 S
6
I D - VDS
6.0 V 5.0 V 4.0V 2.5V 3.5 V 3.0 V 2.0 V
10 9 8
A
I D - VGS
VDS =10V
5
A
8.0V
Drain Current, ID -
Drain Current, ID -
4
7 6 5
3
3
1
2 1
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.5
1.0
1.5
Ta=
2.0
25
VGS=1.5V
C
-25
2
C
4
75C
2.5
Drain-to-Source Voltage, VDS - V
100 7 VDS=10V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 2
Gate-to-Source Voltage, VDS - V
100
| yfs | -
ID
Static Drain-to-Source ON-State Resistance, RDS (on) - m
R DS(on) - VGS
Tc=25C
Forwaard Transfer Addmittance,|yfs| - S
90
25C
Ta =25 C
70 60 50 40 30 20 10 0 0 1
C 75
ID=2A
2
ID=5A
3
80
4
5
6
7
8
9
10
Drain Current, ID - A
100
Gate-to-Source Voltage,VGS - V
10 7 VGS=0 5
R DS(on) - Tc
I F - VSD
Static Drain-to-Source ON-State Resistance, RDS (on) - m
90
70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 120 140
Forward Current, IF - A
80
3 2 1.0 7 5 3 2
A, V ID =2
GS
=2.5
V
Ta =7 5C
-25C
0.6
A, ID =5
VGS =
4V
0.1 7 5 3 2
0.01 0
0.2
0.4
-25C
0.8
1.0
1.2
Case Temperature, Tc - C
Diode Forward Voltage, VSD - V
No.5850-2/3
FW214
10000 7 5 3 2
Ciss,Coss,Crss - VDS
f=1MHz
10
VGS - Qg
Gate-to-Source Voltage, VGS - V
20
VDS=10V 9 ID =5A
8 7 6 5 4 3 2 1
Ciss,Coss,Crss - pF
1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16
Ciss
Coss
Crss
18
0 0
2
4
6
8
10
12
14
16
18
20
22
Drain-to-Source Voltage,VDS - V
1000 7 VDD =10V 5 VGS=4V
Total Gate Charge, Qg - nC
100 7 I DP = 4 8 A 5 3 2
SW Time - I D
ASO
10s
100 s
Switching Time, SW Time - ns
Drain Current, I D - A
3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2
tr
tf
t d(
t d(on)
off)
10 7 5 3 2 1.0 7 5 3 2
,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,,
ID=5A Operation in this area is limited by RDS(on).
1m
10
100 ms
DC
op
era
tio
n
Ta= 25C 1pulse 0.1 1unit 7 Mounted on ceramic board (1200mm2 x0.8mm)
5 2 3 5 7 0.1 2 3 5 7 1.0 2 3
3
5
7 10
2
Drain Current, ID - A
2.0
Drain -to-Source Voltage, VDS - V
2.5
P D (FET2) - P D (FET1)
ou
PD -
Ta
Allowable Dissipation, PD(FET 2) - W
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 1.2 1.4 1.6 1.8 Dissipation, PD(FET 1) - W 0.8 1.0 2.0 0 0
Allowable Dissipation, PD - W
M
nte
2.0
1.7
do
nc
era
mi
cb
oa
1.5
rd
(1
20
To
1.0
0m
tal
mx 0.8
2
Di
ss
mm
1u
ip
)
nit
ati
on
0.5
Mounted on ceramic board (1200mm2x0.8mm)
20 40 60 80 100 120 140 160
Allowable
Ambient Temperature, Ta - C
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.5850-3/3

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